Formation of polymers in TMGa/NH₃/H₂ system under GaN growthHIRAKO, Akira; OHKAWA, Kazuhiro.Journal of crystal growth. 2006, Vol 289, Num 2, pp 428-432, issn 0022-0248, 5 p.Article

The evolution of the microstructure and morphology of metal-organic vapor-phase epitaxy-grown InAs films on (100) GaAsKHANDEKAR, A. A; SURYANARAYANAN, G; BABCOCK, S. E et al.Journal of crystal growth. 2006, Vol 292, Num 1, pp 40-52, issn 0022-0248, 13 p.Article

Growth of thick GaN on the (0001) Al₂O₃ substrate by hydride-metal organic vapor phase epitaxyPARK, Chinho; YEO, Seokki; KIM, Jin-Ho et al.Thin solid films. 2006, Vol 498, Num 1-2, pp 94-99, issn 0040-6090, 6 p.Conference Paper

Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layersCHENG, Kai; LEYS, M; DEGROOTE, S et al.Journal of electronic materials. 2006, Vol 35, Num 4, pp 592-598, issn 0361-5235, 7 p.Article

Engineering structure and properties of hafnium oxide films by atomic layer deposition temperatureKUKLI, Kaupo; AARIK, Jaan; SAMMELSELG, Väino et al.Thin solid films. 2005, Vol 479, Num 1-2, pp 1-11, issn 0040-6090, 11 p.Article

Growth and structural properties of rocksalt MnSe/GaAs epilayer by hot-wall epitaxyYU, Y.-M; KIM, D. J; EOM, S. H et al.Journal of crystal growth. 2005, Vol 279, Num 1-2, pp 70-75, issn 0022-0248, 6 p.Article

Substrate structure dependence of the growth modes of p-quaterphenyl thin films on goldMÜLLEGGER, S; MITSCHE, S; PÖLT, P et al.Thin solid films. 2005, Vol 484, Num 1-2, pp 408-414, issn 0040-6090, 7 p.Article

Direct observation of thermal alteration of mixed film of Ge and SiOKAITO, C; KAMITSUJI, K; TANAKA, S et al.Thin solid films. 2005, Vol 483, Num 1-2, pp 396-399, issn 0040-6090, 4 p.Article

Trade-off between thickness and temperature ramping rate of GaN buffer layer studied for high quality GaN growth on GaAs (1 1 1)A substrateMURAKAMI, Hisashi; KANGAWA, Yoshihiro; KUMAGAI, Yoshinao et al.Journal of crystal growth. 2004, Vol 268, Num 1-2, pp 1-7, issn 0022-0248, 7 p.Article

Unidirectional anisotropies in perylene crystal growth on a liquid surfaceXIANGDONG LIU; KAISER, Volker; WUTTIG, Matthias et al.Journal of crystal growth. 2004, Vol 269, Num 2-4, pp 542-549, issn 0022-0248, 8 p.Article

Microstructure and electrical properties of plasma sprayed porous TiO₂ coatings containing anataseWANG, X. Y; LIU, Z; LIAO, H et al.Thin solid films. 2004, Vol 451-52, pp 37-42, issn 0040-6090, 6 p.Conference Paper

Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications : Strain distribution and wafer bendingPASKOVA, T; DARAKCHIEVA, V; VALCHEVA, E et al.Journal of electronic materials. 2004, Vol 33, Num 5, pp 389-394, issn 0361-5235, 6 p.Conference Paper

Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactorsLOBANOVA, A; MAZAEV, K; YAKOVLEV, E et al.Journal of crystal growth. 2004, Vol 266, Num 1-3, pp 354-362, issn 0022-0248, 9 p.Conference Paper

Influence of laser power on crystalline quality of InGaN with high indium content grown by pulse laser-assisted MOVPEKANGAWA, Yoshihiro; KAWAGUCHI, Norihito; KUMAGAI, Yoshinao et al.Journal of crystal growth. 2004, Vol 272, Num 1-4, pp 444-448, issn 0022-0248, 5 p.Conference Paper

Thickness dependent aggregation of Fe-silicide islands on Si substrateMOLNAR, G; DOZSA, L; PETÖ, G et al.Thin solid films. 2004, Vol 459, Num 1-2, pp 48-52, issn 0040-6090, 5 p.Conference Paper

Growth of a high quality quartz film on sapphire by catalyst-enhanced atmospheric-pressure vapor-phase epitaxy using buffer layersTAKAHASHI, Naoyuki; MAJIMA, Jun; NAKUMURA, Takato et al.Chemistry of materials. 2003, Vol 15, Num 15, pp 2889-2891, issn 0897-4756, 3 p.Article

Growth of the anodic sulfide film on Hg_1-xCd_xTe (MCT) by the potential step method into the electrochemical passivation regionBERLOUIS, L. E. A; MCMILLAN, B; CRUICKSHANK, F. R et al.Surface science. 2003, Vol 525, Num 1-3, pp 137-148, issn 0039-6028, 12 p.Article

Observation of CuPt and CuAu I-type ordered structure in HgCdTe grown by isothermal vapour phase epitaxyAGUIRRE, Myriam H; CANEPA, Horacio R; WALSÖE DE RECA, Noemi E et al.Journal of crystal growth. 2003, Vol 254, Num 3-4, pp 353-359, issn 0022-0248, 7 p.Article

Epitaxial heterostructures: Side-to-side Si-ZnS, Si-ZnSe biaxial nanowires, and sandwichlike ZnS-Si-ZnS triaxial nanowiresJUNQING HU; BANDO, Yoshio; ZONGWEN LIU et al.Journal of the American Chemical Society. 2003, Vol 125, Num 37, pp 11306-11313, issn 0002-7863, 8 p.Article

MOVPE homoepitaxial growth used to study the effect of aging and chemical treatment on GaAs substratesALLWOOD, Dan; MASON, Nigel; MOWBRAY, Andrew et al.Journal of crystal growth. 2003, Vol 248, pp 108-113, issn 0022-0248, 6 p.Conference Paper

Epitaxial lateral overgrowth of GaN on selected-area Si(1 1 1) substrate with nitrided Si maskNAOI, Hiroyuki; NARUKAWA, Mitsuhisa; MIYAKE, Hideto et al.Journal of crystal growth. 2003, Vol 248, pp 573-577, issn 0022-0248, 5 p.Conference Paper

Spectroscopic ellipsometry during metalorganic vapor phase epitaxy of InNSCHMIDTLING, T; DRAGO, M; POHL, U. W et al.Journal of crystal growth. 2003, Vol 248, pp 523-527, issn 0022-0248, 5 p.Conference Paper

Effect of oxidizers on the growth of indium oxide films from indium acetylacetonate vaporMITTOV, O. N; PONOMAREVA, N. I; MITTOVA, I. Ya et al.Inorganic materials. 2002, Vol 38, Num 3, pp 203-206, issn 0020-1685Article

Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during Al_xGa_1-xAs growth in MOVPEHABERLAND, K; KALUZA, A; ZORN, M et al.Journal of crystal growth. 2002, Vol 240, Num 1-2, pp 87-97, issn 0022-0248Article

Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0 0 0 1) films via MOVPEROSKOWSKI, A. M; MIRAGLIA, P. Q; PREBLE, E. A et al.Journal of crystal growth. 2002, Vol 241, Num 1-2, pp 141-150, issn 0022-0248Article